JAN1N5552US
DIODE GEN PURP 600V 3A D-5BManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5552US is a military-grade general-purpose diode designed for demanding applications. This standard recovery diode features a maximum DC reverse voltage of 600 V and an average rectified forward current handling capability of 3 A. Its forward voltage drop is rated at a maximum of 1.2 V at 9 A. The diode exhibits a low reverse leakage current of 1 µA at 600 V and a reverse recovery time of 2 µs. Operating across a junction temperature range of -65°C to 175°C, it is housed in a SQ-MELF, E (D-5B) package suitable for surface mounting. This component meets MIL-PRF-19500/420 qualification standards, making it suitable for aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, E |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | D-5B |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 600 V |
| Qualification | MIL-PRF-19500/420 |
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