JAN1N5552/TR
DIODE GEN PURP 600V 3AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5552-TR is a military-grade, general-purpose diode designed for high-reliability applications. This through-hole component, packaged B, Axial and supplied on tape and reel (TR), features a maximum DC reverse voltage of 600V and an average rectified current handling capability of 3A. The reverse leakage current is a low 1 µA at 600V, and the forward voltage drop is 1.2V at 9A. With a reverse recovery time of 2 µs, this diode operates within a junction temperature range of -65°C to 175°C. Its qualification under MIL-PRF-19500/420 signifies its suitability for demanding environments, finding application in aerospace, defense, and industrial power systems. The speed is classified as Standard Recovery, characterized by times greater than 500ns at currents above 200mA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | B, Axial |
| Mounting Type | Through Hole |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 600 V |
| Qualification | MIL-PRF-19500/420 |
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