JAN1N5550US
DIODE GEN PURP 200V 3A D-5BManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5550US is a general-purpose silicon rectifier diode. This military-grade component, qualified to MIL-PRF-19500/420, offers a maximum repetitive reverse voltage of 200V and a continuous average forward rectified current of 3A. The JAN1N5550US features a low reverse leakage current of 1 µA at 200V and a forward voltage drop of 1.2V at 9A. Its standard recovery time is greater than 2 µs. Encased in a D-5B (SQ-MELF, E) surface-mount package, this diode operates across a junction temperature range of -65°C to 175°C. It finds application in high-reliability systems across aerospace, defense, and industrial sectors requiring robust performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, E |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 2 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | D-5B |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 9 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 200 V |
| Qualification | MIL-PRF-19500/420 |
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