JAN1N5196US
DIODE GP 225V 200MA A SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5196US is a General Purpose Diode, specified for military applications under MIL-PRF-19500/118 qualification. This SQ-MELF packaged component offers a maximum DC reverse voltage of 225 V and an average rectified current handling capability of 200 mA. The forward voltage drop is a maximum of 1 V at 100 mA, with a low reverse leakage current of 25 nA at its rated reverse voltage. Designed for surface mount applications, it operates across a junction temperature range of -65°C to 175°C. This diode is suitable for use in demanding environments within aerospace and defense sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 27 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | A, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 225 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 25 nA @ 225 V |
| Qualification | MIL-PRF-19500/118 |
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