JAN1N5195US/TR
DIODE GP 180V 200MA DO213AAManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N5195US-TR is a military-grade general-purpose diode with a maximum repetitive reverse voltage of 180V. This surface-mount component, housed in a DO-213AA package, offers an average rectified forward current capability of 200mA. It exhibits a low reverse leakage current of 5 µA at 180V and a forward voltage drop of 1V at 100mA. The device operates across a temperature range of -65°C to 175°C and is supplied in Tape & Reel packaging. Qualified to MIL-PRF-19500/118, this diode finds application in demanding environments within aerospace and defense sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 23 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | DO-213AA |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | DO-213AA |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 180 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 5 µA @ 180 V |
| Qualification | MIL-PRF-19500/118 |
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