JAN1N5186/TR
DIODE GEN PURP 100V 3A B AXIALManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology JAN1N5186-TR is a military-grade, general-purpose diode offering 100V reverse voltage and 3A average rectified forward current (Io). This through-hole component, packaged in B, Axial, features a maximum forward voltage (Vf) of 1.5V at 9A and a low reverse leakage of 2 µA at 100V. Designed for demanding applications, it boasts a wide operating junction temperature range of -65°C to 175°C. The JAN1N5186-TR is qualified to MIL-PRF-19500/424 and is supplied in Tape & Reel (TR) packaging. Its fast recovery time of 150 ns makes it suitable for power supply and switching applications across aerospace and defense industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | B, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 150 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 9 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 100 V |
| Qualification | MIL-PRF-19500/424 |
Request a Quote
Clients Also Buy
1N5806US/TR
DIODE GEN PURP 150V 1A D-5A
JANTXV1N6628U/TR
DIODE GP 660V 1.75A SQ-MELF
JAN1N5553/TR
DIODE GEN PURP 800V 3A
