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JAN1N4459

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JAN1N4459

DIODE GEN PURP 1KV 15A DO203AA

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JAN1N4459 is a General Purpose Diode, part of the MIL-PRF-19500/162 qualification. This component features a repetitive peak reverse voltage (Vr) of 1000V and an average rectified forward current (Io) of 15A. The forward voltage drop (Vf) is a maximum of 1.5V at 15A, with a reverse leakage current of 50 µA at 1000V. Designed for chassis or stud mounting within the DO-203AA (DO-4) package, it operates across a junction temperature range of -65°C to 175°C. The diode exhibits standard recovery characteristics, with a speed greater than 500ns for Io exceeding 200mA. This robust component finds application in various industrial and defense systems requiring high voltage and current handling capabilities.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseDO-203AA, DO-4, Stud
Mounting TypeChassis, Stud Mount
SpeedStandard Recovery >500ns, > 200mA (Io)
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)15A
Supplier Device PackageDO-203AA (DO-4)
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.5 V @ 15 A
Current - Reverse Leakage @ Vr50 µA @ 1000 V
QualificationMIL-PRF-19500/162

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