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JAN1N4249/TR

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JAN1N4249/TR

DIODE GEN PURP 1KV 1A

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JAN1N4249-TR is a general-purpose diode designed for demanding applications. This high-voltage device features a 1000 V reverse voltage rating and a 1 A average rectified forward current capacity. Its standard recovery speed, characterized by a reverse recovery time of 5 µs, makes it suitable for various power rectification tasks. The diode exhibits a low reverse leakage current of 1 µA at 1 V and a forward voltage drop of up to 1.3 V at 3 A. Manufactured to meet MIL-PRF-19500/286 specifications, this military-grade component is packaged in an A, Axial through-hole configuration and supplied on tape and reel (TR). The operating junction temperature range is from -65°C to 175°C. This component finds application in aerospace, defense, and industrial power supply systems requiring robust and reliable rectification.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseA, Axial
Mounting TypeThrough Hole
SpeedStandard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)5 µs
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)1A
Supplier Device PackageA, Axial
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)1000 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 3 A
Current - Reverse Leakage @ Vr1 µA @ 1 V
QualificationMIL-PRF-19500/286

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