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JAN1N3890R

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JAN1N3890R

DIODE GEN PURP 100V 12A DO203AA

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology's JAN1N3890R is a military-grade general-purpose diode packaged in a DO-203AA (DO-4) stud mount configuration. This component offers a maximum DC reverse voltage of 100V and an average rectified forward current of 12A. Forward voltage drop at 20A is specified at 1.5V. Reverse leakage current at 100V is a low 10 µA. The diode exhibits a reverse recovery time of 150 ns, classifying it as a fast recovery diode. The operating junction temperature range is -65°C to 175°C. This device meets the MIL-PRF-19500/304 qualification. Applications include power supplies, industrial controls, and aerospace systems.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseDO-203AA, DO-4, Stud
Mounting TypeStud Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)150 ns
TechnologyStandard, Reverse Polarity
Capacitance @ Vr, F115pF @ 10V, 1MHz
Current - Average Rectified (Io)12A
Supplier Device PackageDO-203AA (DO-4)
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If1.5 V @ 20 A
Current - Reverse Leakage @ Vr10 µA @ 100 V
QualificationMIL-PRF-19500/304

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