JAN1N3768R
DIODE GEN PURP REV 1KV 35A DO5Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N3768R is a military-grade, general-purpose diode with a 1000V reverse voltage and 35A average rectified current. This standard recovery diode, featuring a speed of >500ns, is housed in a DO-5 stud-mount package (DO-203AB). It exhibits a low reverse leakage of 10 µA at 1000V and a forward voltage of 1.4V at 110A. The operating junction temperature range is -65°C to 175°C. Qualified to MIL-PRF-19500/297, this component is suitable for applications in aerospace and defense, industrial power supplies, and high-power rectification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AB, DO-5, Stud |
| Mounting Type | Chassis, Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 35A |
| Supplier Device Package | DO-5 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 110 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Qualification | MIL-PRF-19500/297 |