JAN1N3768
DIODE GEN PURP 1KV 35A DO5Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N3768 is a military-grade rectifier diode offering a 1000V reverse voltage rating and 35A average rectified current. This DO-5 package device features a low 10 µA reverse leakage at its maximum reverse voltage and a forward voltage drop of 1.4V at 110A. Designed for high-reliability applications, it operates across a junction temperature range of -65°C to 175°C. The JAN1N3768 conforms to MIL-PRF-19500/297 qualification standards and utilizes standard recovery technology with a speed greater than 500ns. Its chassis, stud mount configuration is suitable for demanding industrial, aerospace, and defense power supply and control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AB, DO-5, Stud |
| Mounting Type | Chassis, Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 35A |
| Supplier Device Package | DO-5 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 1000 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 110 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 1000 V |
| Qualification | MIL-PRF-19500/297 |
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