JAN1N3766
DIODE GEN PURP 800V 35A DO5Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N3766 is a general-purpose diode designed for demanding applications. This military-grade component features a reverse voltage rating of 800 V and an average rectified forward current handling capability of 35 A. The device operates across a wide temperature range from -65°C to 175°C, ensuring reliable performance in harsh environments. With a forward voltage drop of 1.4 V at 110 A and a reverse leakage current of 10 µA at 800 V, it offers efficient power handling. The JAN1N3766 utilizes standard recovery technology with a speed exceeding 500 ns. It is presented in a DO-203AB, DO-5 package with stud mounting for robust chassis integration. This diode is typically found in high-power industrial, aerospace, and defense systems requiring high reliability and stringent performance specifications. It adheres to MIL-PRF-19500/297 qualification standards.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AB, DO-5, Stud |
| Mounting Type | Chassis, Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 35A |
| Supplier Device Package | DO-5 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 110 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 800 V |
| Qualification | MIL-PRF-19500/297 |
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