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JAN1N3766

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JAN1N3766

DIODE GEN PURP 800V 35A DO5

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology JAN1N3766 is a general-purpose diode designed for demanding applications. This military-grade component features a reverse voltage rating of 800 V and an average rectified forward current handling capability of 35 A. The device operates across a wide temperature range from -65°C to 175°C, ensuring reliable performance in harsh environments. With a forward voltage drop of 1.4 V at 110 A and a reverse leakage current of 10 µA at 800 V, it offers efficient power handling. The JAN1N3766 utilizes standard recovery technology with a speed exceeding 500 ns. It is presented in a DO-203AB, DO-5 package with stud mounting for robust chassis integration. This diode is typically found in high-power industrial, aerospace, and defense systems requiring high reliability and stringent performance specifications. It adheres to MIL-PRF-19500/297 qualification standards.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseDO-203AB, DO-5, Stud
Mounting TypeChassis, Stud Mount
SpeedStandard Recovery >500ns, > 200mA (Io)
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)35A
Supplier Device PackageDO-5
Operating Temperature - Junction-65°C ~ 175°C
GradeMilitary
Voltage - DC Reverse (Vr) (Max)800 V
Voltage - Forward (Vf) (Max) @ If1.4 V @ 110 A
Current - Reverse Leakage @ Vr10 µA @ 800 V
QualificationMIL-PRF-19500/297

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