JAN1N3671AR
DIODE GEN PURP 800V 12A DO203AAManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N3671AR is a military-grade general-purpose diode designed for high-reliability applications. This component features a voltage rating of 800 V with a maximum forward voltage drop of 1.35 V at 38 A. It offers a substantial average rectified current handling capability of 12 A and a low reverse leakage of 5 µA at its maximum reverse voltage. The diode utilizes standard recovery technology with a speed exceeding 500 ns for currents over 200 mA.
Encased in a DO-203AA (DO-4) stud-mount package, the JAN1N3671AR is suitable for chassis mounting and operates across a wide temperature range of -65°C to 150°C. Its qualification to MIL-PRF-19500/260 underscores its suitability for demanding environments. This diode is commonly employed in power supplies, industrial controls, and aerospace systems requiring robust performance and stringent quality standards.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Mounting Type | Chassis, Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | DO-203AA (DO-4) |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 800 V |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 38 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 800 V |
| Qualification | MIL-PRF-19500/260 |
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