JAN1N3600
DIODE GEN PURP 50V 200MA DO7Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N3600 is a military-grade general-purpose diode. This through-hole component features a DO-7 (DO-204AA) axial package and is rated for a maximum DC reverse voltage of 50 V. The average rectified forward current handling is 200 mA, with a forward voltage drop of 1 V at 200 mA. Reverse leakage current is specified at a low 100 nA at 50 V. The JAN1N3600 exhibits a reverse recovery time of 4 ns. Operating junction temperature ranges from -65°C to 175°C. This device meets the MIL-PRF-19500/231 qualification, making it suitable for demanding applications in aerospace and defense sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-204AA, DO-7, Axial |
| Mounting Type | Through Hole |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 200mA |
| Supplier Device Package | DO-7 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 200 mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 50 V |
| Qualification | MIL-PRF-19500/231 |
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