JAN1N1190R
DIODE GEN PURP REV 600V 35A DO5Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology JAN1N1190R is a military-grade general-purpose diode designed for high-reliability applications. This component features a 600V reverse voltage rating and a 35A average rectified current capability. The diode is housed in a DO-5 (DO-203AB) stud-mount package suitable for chassis mounting, ensuring efficient thermal management. Operating across a junction temperature range of -65°C to 175°C, the JAN1N1190R exhibits a standard recovery speed exceeding 500ns for currents above 200mA. Forward voltage drop is rated at a maximum of 1.4V at 110A. The reverse leakage current is a low 10µA at 600V. This device is qualified under MIL-PRF-19500/297, making it suitable for demanding applications in aerospace, defense, and industrial sectors requiring robust performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 29 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AB, DO-5, Stud |
| Mounting Type | Chassis, Stud Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 35A |
| Supplier Device Package | DO-5 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 110 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 600 V |
| Qualification | MIL-PRF-19500/297 |
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