CD5818
DIODE SCHOTTKY 30V 1A DIEManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology Schottky Diode, Part Number CD5818, is a 30V, 1A surface mount die designed for demanding applications. This component features a low forward voltage of 600mV at 1A and a reverse leakage of 100µA at 30V, characteristic of advanced Schottky technology for efficient power management. Rated for a junction temperature range of -55°C to 125°C and qualified to MIL-PRF-19500/586, the CD5818 is suitable for military and high-reliability environments. Its fast recovery speed, exceeding 200mA at Io, ensures optimal performance in high-frequency switching circuits. The CD5818 is supplied in Tape & Reel packaging, ideal for automated assembly processes in industries such as aerospace, defense, and high-performance electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -55°C ~ 125°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 30 V |
| Voltage - Forward (Vf) (Max) @ If | 600 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 30 V |
| Qualification | MIL-PRF-19500/586 |
Request a Quote
Clients Also Buy
JAN1N5623US/TR
DIODE GEN PURP 1KV 1A D-5A
JANTX1N5418US
DIODE GEN PURP 400V 3A D-5B
S4380D
DIODE GEN PURP 800V 150A DO205AA
