CD1A80
DIODE SCHOTTKY 80V 1A DIEManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology CD1A80 is a Schottky barrier diode offered as a bare die. This component features a maximum repetitive reverse voltage of 80V and a continuous forward current rating of 1A. The forward voltage drop is a nominal 750mV at 1A, with a low reverse leakage current of 100 µA at its maximum reverse voltage. Designed for high-reliability applications, this diode adheres to MIL-PRF-19500/586 qualification and operates within a junction temperature range of -55°C to 125°C. The part is supplied in a Die package, suitable for advanced semiconductor assembly processes. Its fast switching characteristics make it ideal for use in power supply rectification, high-frequency switching applications, and voltage clamping circuits within the aerospace and defense industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | Die |
| Operating Temperature - Junction | -55°C ~ 125°C |
| Grade | Military |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 750 mV @ 1 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 80 V |
| Qualification | MIL-PRF-19500/586 |
Request a Quote
Clients Also Buy
1N4448/TR
DIODE GEN PURP 75V 200MA DO35
JANS1N6661
DIODE GEN PURP 225V 500MA DO35
SD24145C
DIODE SCHOTTKY 45V 30A TO204AA
