688-18
DIODE GEN PURP 18KV 350MAManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 688-18 is a general-purpose diode designed for high-voltage applications. This chassis-mount component offers a significant reverse voltage rating of 18000 V (18 kV) and a forward current capability of 350 mA. The diode exhibits a low reverse leakage current of 2 µA at its maximum reverse voltage. Its forward voltage drop is specified at a maximum of 30 V when conducting 400 mA. With a reverse recovery time of 500 ns, it is classified as a fast recovery diode. The operating junction temperature range is from -65°C to 150°C. This component is suitable for use in power supply rectification, voltage multiplier circuits, and high-voltage generation systems within the industrial and medical equipment sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 40 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 500 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 350mA |
| Supplier Device Package | - |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 18000 V |
| Voltage - Forward (Vf) (Max) @ If | 30 V @ 400 mA |
| Current - Reverse Leakage @ Vr | 2 µA @ 18000 V |
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