1N6779
DIODE GEN PURP 600V 15A TO257Manufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology 1N6779 is a general-purpose diode with a maximum DC reverse voltage of 600V and an average rectified current of 15A. This through-hole component, housed in a TO-257 package, features a forward voltage of 1.6V at 15A and a reverse leakage of 10 µA at 480V. The diode exhibits a fast recovery time (trr) of 60 ns, suitable for applications requiring efficient switching. Its junction operating temperature can reach up to 150°C (Max). This component finds application in power supply, industrial control, and automotive sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 60 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 300pF @ 5V, 1MHz |
| Current - Average Rectified (Io) | 15A |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 15 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 480 V |
Request a Quote
Clients Also Buy
MBR40200PTE3/TU
DIODE SCHOTTKY 40A 200V TO-247AD
1N2057R
DIODE GP REV 200V 275A DO205AB
HSM390JE3/TR13
DIODE SCHOTTKY 90V 3A DO214AB
