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1N6765R

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1N6765R

DIODE GEN PURP 200V 12A TO254

Manufacturer: Microchip Technology

Categories: Single Diodes

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Microchip Technology 1N6765R is a general-purpose fast recovery diode designed for demanding applications. This through-hole component, housed in a TO-254 package, offers a maximum DC reverse voltage of 200 V and a high average rectified current capability of 12 A. With a forward voltage drop of 1.05 V at 12 A and a reverse leakage of only 10 µA at 200 V, it exhibits efficient operation. The diode's fast recovery time of 35 ns ensures minimal switching losses, making it suitable for power supply rectification, motor control, and industrial automation. Its broad operating temperature range of -55°C to 175°C junction temperature further enhances its reliability in harsh environments.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-254-3, TO-254AA
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
TechnologyStandard, Reverse Polarity
Capacitance @ Vr, F300pF @ 5V, 1MHz
Current - Average Rectified (Io)12A
Supplier Device PackageTO-254
Operating Temperature - Junction-55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)200 V
Voltage - Forward (Vf) (Max) @ If1.05 V @ 12 A
Current - Reverse Leakage @ Vr10 µA @ 200 V

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