1N6666R
DIODE GP REV 200V 10A TO257Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N6666R is a general-purpose rectifier diode with a 200V reverse voltage and 10A average rectified current (Io) capability. This through-hole component, packaged in a TO-257-3 case, features a fast recovery time (trr) of 35 ns, suitable for applications requiring efficient switching. The forward voltage drop (Vf) is a maximum of 1V at 6A, with a low reverse leakage current of 75 µA at 200V. Operating junction temperatures range from -65°C to 200°C. This diode is commonly employed in power supply rectification, switching power supplies, and general high-current rectification circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | 100pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | -65°C ~ 200°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 6 A |
| Current - Reverse Leakage @ Vr | 75 µA @ 200 V |