1N6666
DIODE GEN PURP 200V 10A TO257Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N6666 is a general-purpose diode with a maximum repetitive reverse voltage of 200 V and a continuous average forward current of 10 A. This through-hole component, housed in a TO-257 package, features a forward voltage drop of 1 V at 30 A and a reverse recovery time of 35 ns, classifying it as a fast recovery diode. Its operating junction temperature reaches up to 200°C. This device is suitable for power supply applications, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | 200°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 30 A |