1N6665R
DIODE GEN PURP 150V 10A TO257Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N6665R is a general-purpose diode, identified by its TO-257 package. This through-hole component features a maximum DC reverse voltage (Vr) of 150 V and an average rectified forward current (Io) of 10 A. The forward voltage (Vf) is a maximum of 1 V at 6 A, with a reverse leakage current of 250 nA at 150 V. Operating at junction temperatures up to 200°C, this fast recovery diode has a reverse recovery time (trr) of 35 ns. Its standard technology and reverse polarity are suitable for applications in industrial power supplies, automotive electronics, and telecommunications infrastructure. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | 200°C |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 6 A |
| Current - Reverse Leakage @ Vr | 250 nA @ 150 V |