1N6664R
DIODE GEN PURP 100V 6A TO257Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N6664R is a general-purpose diode designed for demanding applications. This through-hole component, packaged in a TO-257 case, offers a maximum DC reverse voltage of 100V and a rectified average forward current capability of 6A. Featuring a fast recovery time of 35 ns, it is suitable for power supply circuits and switching applications. The forward voltage drop is a maximum of 1V at 6A, with a low reverse leakage current of 250 nA at 100V. This diode is utilized in industrial and power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-257-3 |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | TO-257 |
| Operating Temperature - Junction | - |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 6 A |
| Current - Reverse Leakage @ Vr | 250 nA @ 100 V |