1N6663US/TR
DIODE GEN PURP 600V 500MA D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N6663US-TR is a general-purpose diode designed for demanding applications. This surface-mount component, housed in a SQ-MELF, A (D-5A) package, offers a reverse voltage capability of up to 600V and a forward current of 500mA. Its fast recovery characteristic, with a speed of less than or equal to 500ns for currents greater than 200mA, ensures efficient operation in switching circuits. The diode exhibits a low forward voltage of 1V at 400mA and a minimal reverse leakage current of 50 nA at 600V. Operating across a junction temperature range of -65°C to 175°C, this component is suitable for power supply rectification, general switching, and high-voltage circuits found in industrial, automotive, and consumer electronics. The device is supplied in Tape & Reel packaging for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 500mA |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 400 mA |
| Current - Reverse Leakage @ Vr | 50 nA @ 600 V |
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