1N6657R
DIODE GEN PURP 100V 15A TO254Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N6657R is a general-purpose diode with a maximum DC reverse voltage (Vr) of 100V. This device offers an average rectified forward current (Io) of 15A and a low reverse leakage of 10 µA at 100V. Featuring a fast recovery time (trr) of 35 ns, it is suitable for applications requiring switching speeds greater than 200mA. The forward voltage (Vf) is rated at a maximum of 1.2V at 20A. Housed in a TO-254-3, TO-254AA package, this through-hole component operates within a junction temperature range of -55°C to 175°C. The 1N6657R is commonly employed in power supply rectification, voltage clamping, and general switching applications across industrial and automotive sectors. Its capacitance at 10V and 1MHz is 150pF.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-254-3, TO-254AA |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | 150pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 15A |
| Supplier Device Package | TO-254 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
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