1N6657
DIODE GEN PURP 100V 15A TO254Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N6657 is a general-purpose diode engineered for demanding applications. This through-hole component, housed in a TO-254 package, offers a maximum DC reverse voltage of 100V and a continuous average rectified current of 15A. Its fast recovery time of 35 ns, coupled with a forward voltage drop of 1.2V at 20A, makes it suitable for high-speed switching rectification. The diode exhibits a low reverse leakage current of 10 µA at 100V and has a junction capacitance of 150pF at 10V and 1MHz. Operating across a temperature range of -55°C to 175°C, the 1N6657 finds utility in power supplies, industrial controls, and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-254-3, TO-254AA |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 150pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 15A |
| Supplier Device Package | TO-254 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
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