1N6631
DIODE GEN PURP 1.1KV 1.4A AXIALManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N6631 is a general-purpose diode designed for demanding applications. This axial-packaged device features a maximum DC reverse voltage (Vr) of 1100 V and an average rectified current (Io) of 1.4 A. The forward voltage drop (Vf) is a maximum of 1.4 V at 1.4 A, with a low reverse leakage current of 4 µA at 1100 V. With a reverse recovery time (trr) of 60 ns, it falls within the fast recovery category. The diode exhibits a capacitance of 40 pF at 10 V and 1 MHz. Operating across a junction temperature range of -65°C to 150°C, this through-hole component is suitable for power supplies, industrial control systems, and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 60 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 40pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1.4A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.4 V @ 1.4 A |
| Current - Reverse Leakage @ Vr | 4 µA @ 1100 V |
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