1N6628/TR
DIODE GEN PURP 600V 1.75A A-PAKManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N6628-TR is a fast-recovery general-purpose diode designed for high-voltage applications. This component features a maximum repetitive reverse voltage (Vr) of 600 V and a maximum average rectified forward current (Io) of 1.75 A. Its forward voltage drop (Vf) is rated at a maximum of 1.35 V at 2 A. The device exhibits a low reverse leakage current of 2 µA at 600 V and a reverse recovery time (trr) of 45 ns, classifying it as a fast-recovery diode. The 1N6628-TR is packaged in an A, Axial through-hole configuration and supplied on tape and reel (TR). It operates across a junction temperature range of -65°C to 150°C. This diode is commonly utilized in power supply rectification, switching power supplies, and various industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 45 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1.75A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 2 A |
| Current - Reverse Leakage @ Vr | 2 µA @ 600 V |
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