1N6625E3
DIODE GEN PURP 1.1KV 1A A AXIALManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N6625E3 is a general-purpose diode designed for demanding applications. This axial-packaged device offers a maximum DC reverse voltage (Vr) of 1100 V and an average rectified forward current (Io) of 1A. It features a typical forward voltage (Vf) of 1.95 V at 1.5 A and a low reverse leakage current of 1 µA at 1000 V. With a reverse recovery time (trr) of 80 ns, this diode is classified as fast recovery, suitable for power supply rectification, switching power supplies, and general industrial control systems. The through-hole mounting facilitates robust assembly in various electronic systems. Operating across a junction temperature range of -65°C to 150°C, the 1N6625E3 provides reliable performance in challenging environments.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 80 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 1100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.95 V @ 1.5 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 1000 V |
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