1N6624US
DIODE GEN PURP 990V 1A A-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology presents the 1N6624US, a general-purpose diode with a 990V reverse voltage rating and 1A average rectified current (Io). This fast-recovery diode, characterized by a reverse recovery time (trr) of 50 ns, is housed in an A-MELF (SQ-MELF, A) surface-mount package. Its low reverse leakage current is specified at 500 nA at 990V, and the forward voltage drop (Vf) is a maximum of 1.55V at 1A forward current. The device exhibits a capacitance of 10pF at 10V and 1MHz. Operating across a junction temperature range of -65°C to 150°C, the 1N6624US finds application in power supply circuits, high-voltage rectification, and switching applications across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 10pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A-MELF |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 990 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 1 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 990 V |
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