1N6623US/TR
DIODE GEN PURP 880V 1A A-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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The Microchip Technology 1N6623US-TR is a general-purpose diode designed for surface mount applications. This A-MELF packaged component features a maximum DC reverse voltage of 880 V and an average rectified forward current capability of 1 A. Its forward voltage drop is specified at a maximum of 1.55 V at 1 A. The diode exhibits a reverse leakage current of 500 nA at its maximum reverse voltage. With a reverse recovery time of 50 ns, it is classified as a fast recovery diode. The operating junction temperature range is from -65°C to 150°C. The component is supplied in Tape & Reel packaging. This device is suitable for use in power supply circuits and general rectification applications within the industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 10pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | A-MELF |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Voltage - DC Reverse (Vr) (Max) | 880 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 1 A |
| Current - Reverse Leakage @ Vr | 500 nA @ 880 V |
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