1N6491
DIODE GEN PURP 600V 400MA DO35Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N6491 is a general-purpose diode designed for demanding applications. This through-hole component, housed in a DO-204AH (DO-35) axial package, offers a reverse voltage rating of 600V and an average rectified current capability of 400mA. It exhibits a maximum forward voltage of 1V at 400mA and a low reverse leakage current of 50nA at 600V. With a standard recovery time exceeding 500ns, the 1N6491 is suitable for power supply rectification, voltage clamping, and general signal switching in industrial control, automotive, and consumer electronics. The operating junction temperature range is -65°C to 175°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-204AH, DO-35, Axial |
| Mounting Type | Through Hole |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 400mA |
| Supplier Device Package | DO-204AH (DO-35) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 400 mA |
| Current - Reverse Leakage @ Vr | 50 nA @ 600 V |
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