1N6306R
DIODE GEN PURP 150V 70A DO5Manufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology 1N6306R is a general-purpose diode with a maximum repetitive reverse voltage (Vr) of 150 V and an average rectified forward current (Io) of 70 A. This stud-mount DO-5 (DO-203AB) package diode features a forward voltage (Vf) of 1.18 V at 150 A and a reverse leakage current of 25 µA at 150 V. With a capacitance of 600 pF at 10 V and 1 MHz, and a reverse recovery time (trr) of 60 ns, it is classified as a fast recovery diode. The operating junction temperature range is -65°C to 175°C. This component is suitable for applications requiring robust rectification and power handling, commonly found in industrial power supplies and motor control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AB, DO-5, Stud |
| Mounting Type | Stud Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 60 ns |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | 600pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 70A |
| Supplier Device Package | DO-5 (DO-203AB) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 1.18 V @ 150 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 150 V |
Request a Quote
Clients Also Buy
1N5806US/TR
DIODE GEN PURP 150V 1A D-5A
JANTXV1N6628U/TR
DIODE GP 660V 1.75A SQ-MELF
JAN1N5553/TR
DIODE GEN PURP 800V 3A
