1N6080US
DIODE GEN PURP 100V 2A G-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N6080US is a general-purpose diode featuring a 100V reverse voltage rating and a 2A average rectified current capability. This device utilizes standard diode technology and is housed in a G-MELF (D-5C) package, facilitating efficient surface mounting. With a forward voltage drop of 1.5V at a high forward current of 37.7A, it demonstrates robust performance. The reverse leakage current is specified at 10 µA at 100V. It boasts a fast recovery time of 30 ns. The operating junction temperature range is -65°C to 155°C. This component is commonly employed in power supply circuits, switching applications, and general rectification within the automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, G |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | G-MELF (D-5C) |
| Operating Temperature - Junction | -65°C ~ 155°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 37.7 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
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