1N6079/TR
DIODE GEN PURP 50V 2AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N6079-TR is a general-purpose diode designed for robust performance in demanding applications. This component features a maximum repetitive reverse voltage (Vr) of 50V and a continuous forward current (Io) of 2A, making it suitable for power rectification and switching duties. With a fast reverse recovery time (trr) of 30 ns, it excels in applications requiring efficient energy management. The diode exhibits a low forward voltage drop of 1.5V at a high forward current of 37.7A and a minimal reverse leakage current of 10 µA at 50V. Packaged in an A, Axial configuration and supplied on tape and reel (TR), the 1N6079-TR is readily integrated into automated assembly processes. Its operating temperature range of -65°C to 155°C ensures reliability across various environmental conditions, commonly found in industrial control systems and power supply designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | A, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | A, Axial |
| Operating Temperature - Junction | -65°C ~ 155°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 37.7 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |
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