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1N6076/TR

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1N6076/TR

DIODE GEN PURP 50V 1.3A

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology 1N6076-TR is a general-purpose diode designed for demanding applications. This component features a maximum DC reverse voltage of 50 V and an average rectified forward current (Io) of 1.3 A. The forward voltage (Vf) is a maximum of 1.76 V at a forward current of 18.8 A. The reverse leakage current is rated at 5 µA at 50 V. With a reverse recovery time (trr) of 30 ns, this diode is classified as fast recovery. The operating junction temperature range is -65°C to 155°C. The component is housed in an A, Axial package and is supplied on Tape & Reel (TR). This diode finds utility in power supply circuits, switching applications, and general rectification across various industrial electronics sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseA, Axial
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30 ns
TechnologyStandard
Capacitance @ Vr, F-
Current - Average Rectified (Io)1.3A
Supplier Device PackageA, Axial
Operating Temperature - Junction-65°C ~ 155°C
Voltage - DC Reverse (Vr) (Max)50 V
Voltage - Forward (Vf) (Max) @ If1.76 V @ 18.8 A
Current - Reverse Leakage @ Vr5 µA @ 50 V

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