1N6073US
DIODE GEN PURP 50V 3A D-5AManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N6073US is a general-purpose diode designed for high-current applications. This device features a 50V reverse voltage rating and a 3A average rectified current capability. With a fast recovery time of 30 ns, it is suitable for applications requiring efficient switching. The forward voltage drop is a maximum of 2.04V at 9.4A. The reverse leakage current is a mere 1 µA at 50V. The 1N6073US is housed in a SQ-MELF, A package (Supplier Device Package D-5A) for surface mounting, offering a robust solution for demanding environments. This component finds utility in power supply circuits, rectification, and general-purpose switching across industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 52 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, A |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | D-5A |
| Operating Temperature - Junction | -65°C ~ 155°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 2.04 V @ 9.4 A |
| Current - Reverse Leakage @ Vr | 1 µA @ 50 V |
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