1N5825E3
DIODE SCHOTTKY 40V 5A AXIALManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology 1N5825E3 is a Schottky barrier rectifier diode designed for high-efficiency power rectification applications. This through-hole component offers a maximum DC reverse voltage of 40V and an average rectified forward current capability of 5A. Featuring a low forward voltage drop of 380mV at 5A, it minimizes power loss and improves system efficiency. The diode's fast switching characteristics contribute to reduced switching losses in power supply circuits. Operating across a junction temperature range of -65°C to 125°C, the 1N5825E3 is suitable for demanding environments. It is commonly employed in power supplies, voltage clamping, and reverse polarity protection circuits within the industrial and automotive sectors. The component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | Axial |
| Operating Temperature - Junction | -65°C ~ 125°C |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 380 mV @ 5 A |
| Current - Reverse Leakage @ Vr | 10 mA @ 40 V |
Request a Quote
Clients Also Buy
1N5806US/TR
DIODE GEN PURP 150V 1A D-5A
JANTXV1N6628U/TR
DIODE GP 660V 1.75A SQ-MELF
JAN1N5553/TR
DIODE GEN PURP 800V 3A
