1N5822US/TR
DIODE SCHOTTKY 40V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N5822US-TR is a Schottky diode designed for efficient rectification. This component features a 40V DC reverse voltage rating and a maximum forward voltage drop of 500mV at 3A. With an average rectified forward current (Io) of 3A, it offers a low reverse leakage current of 100 µA at 40V. The 1N5822US-TR utilizes Schottky technology for fast switching speeds, making it suitable for power supply applications, voltage clamping, and reverse polarity protection. Its SQ-MELF, B package is ideal for surface mount assembly, delivered in Tape & Reel (TR) packaging. This diode is commonly employed in industrial, automotive, and consumer electronics sectors where efficient power management is critical. Operating temperature ranges from -65°C to 125°C junction.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 125°C |
| Voltage - DC Reverse (Vr) (Max) | 40 V |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 40 V |