1N5820US
DIODE SCHOTTKY 20V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
Quality Control: Learn More
Microchip Technology's 1N5820US is a Schottky diode designed for high-efficiency rectification. This surface-mount component features a maximum reverse voltage (Vr) of 20V and an average rectified current (Io) of 3A. Its forward voltage drop (Vf) is a low 500mV at 3A, contributing to reduced power loss. The diode exhibits a reverse leakage current of 100 µA at its rated Vr. Packaged in a SQ-MELF, B configuration for robust thermal performance and automated assembly, the 1N5820US operates across a junction temperature range of -65°C to 125°C. Its fast recovery characteristics make it suitable for applications in power supplies, switching circuits, and automotive electronics where efficient voltage management is critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Technology | Schottky |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 125°C |
| Voltage - DC Reverse (Vr) (Max) | 20 V |
| Voltage - Forward (Vf) (Max) @ If | 500 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 20 V |
Request a Quote
Clients Also Buy
MBR40200PTE3/TU
DIODE SCHOTTKY 40A 200V TO-247AD
S3690
STD RECTIFIER
1N2789
DIODE GEN PURP 400V 70A DO5
