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1N5813R

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1N5813R

DIODE GEN PURP 75V 20A DO203AA

Manufacturer: Microchip Technology

Categories: Single Diodes

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The Microchip Technology 1N5813R is a general-purpose, fast-recovery rectifier diode with a maximum repetitive reverse voltage of 75V. This stud-mount component, housed in a DO-203AA (DO-4) package, offers an average rectified forward current capability of 20A. Its forward voltage drop is specified at a maximum of 950mV at 20A. The diode exhibits a reverse leakage current of 10 µA at 75V. With a junction operating temperature range of -65°C to 175°C and a reverse recovery time of 35 ns, this device is suitable for power supply, motor control, and welding applications. It is available in bulk packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseDO-203AA, DO-4, Stud
Mounting TypeStud Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)35 ns
TechnologyStandard, Reverse Polarity
Capacitance @ Vr, F300pF @ 10V, 1MHz
Current - Average Rectified (Io)20A
Supplier Device PackageDO-203AA (DO-4)
Operating Temperature - Junction-65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)75 V
Voltage - Forward (Vf) (Max) @ If950 mV @ 20 A
Current - Reverse Leakage @ Vr10 µA @ 75 V

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