1N5812R
DIODE GEN PURP 50V 20A DO203AAManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N5812R is a general-purpose diode featuring a 50V reverse voltage and a 20A average rectified current. This stud-mount device, housed in a DO-203AA (DO-4) package, offers a fast recovery time of 35ns and a forward voltage drop of 950mV at 20A. The capacitance at 10V and 1MHz is typically 300pF, with a reverse leakage current of 10 µA at 50V. Operating across a junction temperature range of -65°C to 175°C, this diode is suitable for applications in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Mounting Type | Stud Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 35 ns |
| Technology | Standard, Reverse Polarity |
| Capacitance @ Vr, F | 300pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | DO-203AA (DO-4) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 20 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 50 V |