1N5811U4
DIODE GEN PURP 150V 6A U4Manufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N5811U4 is a General Purpose Diode with a maximum DC reverse voltage of 150V. This through-hole device offers an average rectified current handling capability of 6A. Its forward voltage drop is specified at 925mV at 6A, with a reverse leakage current of 5 µA at 150V. The 1N5811U4 features a reverse recovery time of 525 µs, classifying it as a standard recovery speed. Operating within a junction temperature range of -65°C to 175°C, this diode is housed in a 3-SMD, No Lead package, identified by the U4 supplier device package. This component finds application in various industrial and commercial electronics, including power supplies and switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 35 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 525 µs |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | U4 |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 925 mV @ 6 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 150 V |
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