1N5811E3/TR
DIODE GEN PURP 150V 3A B AXIALManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N5811E3-TR is a general-purpose diode with a 150V reverse voltage rating and a 3A average rectified current capability. This axial-leaded device features a fast recovery time of 30ns, suitable for applications requiring efficient switching. Its low leakage current is 5 µA at 150V. The diode exhibits a forward voltage drop of 875mV at 4A. With a junction operating temperature range of -65°C to 175°C, it is designed for robust performance. The component is supplied in a B, Axial package and is available on tape and reel. Typical applications include power supplies, voltage clamping, and general rectification across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | B, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 150 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 150 V |
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