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1N5809US/TR

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1N5809US/TR

DIODE GEN PURP 100V 3A B SQ-MELF

Manufacturer: Microchip Technology

Categories: Single Diodes

Quality Control: Learn More

Microchip Technology's 1N5809US-TR is a general-purpose rectifier diode featuring a 3A average rectified forward current (Io) and a maximum DC reverse voltage (Vr) of 100V. This surface mount device, housed in a SQ-MELF, B package, exhibits a forward voltage (Vf) of 875mV at 4A. The diode's reverse leakage current is a low 5 µA at 100V. Designed for fast recovery applications, its reverse recovery time (trr) is 30 ns, classifying it as Fast Recovery. The operational junction temperature range is from -65°C to 175°C. This component is commonly utilized in power supply rectification, switching power supplies, and general-purpose electronic circuits across various industries including industrial automation and consumer electronics. The part is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSQ-MELF, B
Mounting TypeSurface Mount
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30 ns
TechnologyStandard
Capacitance @ Vr, F60pF @ 10V, 1MHz
Current - Average Rectified (Io)3A
Supplier Device PackageB, SQ-MELF
Operating Temperature - Junction-65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)100 V
Voltage - Forward (Vf) (Max) @ If875 mV @ 4 A
Current - Reverse Leakage @ Vr5 µA @ 100 V

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