1N5809US/TR
DIODE GEN PURP 100V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology's 1N5809US-TR is a general-purpose rectifier diode featuring a 3A average rectified forward current (Io) and a maximum DC reverse voltage (Vr) of 100V. This surface mount device, housed in a SQ-MELF, B package, exhibits a forward voltage (Vf) of 875mV at 4A. The diode's reverse leakage current is a low 5 µA at 100V. Designed for fast recovery applications, its reverse recovery time (trr) is 30 ns, classifying it as Fast Recovery. The operational junction temperature range is from -65°C to 175°C. This component is commonly utilized in power supply rectification, switching power supplies, and general-purpose electronic circuits across various industries including industrial automation and consumer electronics. The part is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |