1N5809E3/TR
DIODE GEN PURP 100V 6A B AXIALManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N5809E3-TR is a general-purpose diode with a 100V reverse voltage rating and a 6A average rectified current capability. This through-hole component, packaged in B, Axial form, offers a fast recovery time of 30 ns, falling within the <500ns, >200mA (Io) speed classification. Its forward voltage drop is a maximum of 875 mV at 4A. The operating junction temperature range is -65°C to 175°C. This device is utilized in various applications including power supplies, voltage clamping, and general rectification circuits. The 1N5809E3-TR is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | B, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | - |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | B, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
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