1N5807US/TR
DIODE GEN PURP 50V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N5807US-TR is a 50V, 3A general-purpose diode in a SQ-MELF, B package. This surface mount device offers a forward voltage of 875mV at 4A and a reverse leakage of 5µA at 50V. With a fast recovery time of 30ns, it is suitable for applications requiring efficient rectification. The operating junction temperature range is -65°C to 175°C. This component is commonly found in power supply circuits, automotive electronics, and industrial control systems. The 1N5807US-TR is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 50 V |