1N5807US
DIODE GEN PURP 50V 3A B SQ-MELFManufacturer: Microchip Technology
Categories: Single Diodes
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Microchip Technology 1N5807US is a 50V, 3A general-purpose diode. This SQ-MELF packaged component features a fast recovery time of 30ns, suitable for applications requiring rapid switching. Its low forward voltage is 875mV at 4A, and it exhibits a reverse leakage current of 5µA at 50V. With a junction operating temperature range of -65°C to 175°C, this device is designed for robust performance. The 1N5807US finds application in power supply units, automotive electronics, and industrial control systems. This component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SQ-MELF, B |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, SQ-MELF |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 50 V |
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