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1N5807/TR

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1N5807/TR

DIODE GEN PURP 50V 3A

Manufacturer: Microchip Technology

Categories: Single Diodes

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The Microchip Technology 1N5807-TR is a general-purpose diode designed for efficient rectification. This through-hole component offers a 50V reverse voltage rating and a 3A average rectified current capability. Its fast recovery speed, with a reverse recovery time (trr) of 30 ns, makes it suitable for applications demanding rapid switching. The diode exhibits a low forward voltage drop of 875 mV at 4A and a reverse leakage current of 5 µA at its maximum reverse voltage. With a junction operating temperature range of -65°C to 175°C, it is well-suited for demanding environments. The 1N5807-TR is supplied in a B, Axial package and is available on tape and reel for automated assembly. This component finds application in power supplies, switching circuits, and other general rectification tasks across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseB, Axial
Mounting TypeThrough Hole
SpeedFast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)30 ns
TechnologyStandard
Capacitance @ Vr, F60pF @ 10V, 1MHz
Current - Average Rectified (Io)3A
Supplier Device PackageB, Axial
Operating Temperature - Junction-65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max)50 V
Voltage - Forward (Vf) (Max) @ If875 mV @ 4 A
Current - Reverse Leakage @ Vr5 µA @ 50 V

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