1N5807/TR
DIODE GEN PURP 50V 3AManufacturer: Microchip Technology
Categories: Single Diodes
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The Microchip Technology 1N5807-TR is a general-purpose diode designed for efficient rectification. This through-hole component offers a 50V reverse voltage rating and a 3A average rectified current capability. Its fast recovery speed, with a reverse recovery time (trr) of 30 ns, makes it suitable for applications demanding rapid switching. The diode exhibits a low forward voltage drop of 875 mV at 4A and a reverse leakage current of 5 µA at its maximum reverse voltage. With a junction operating temperature range of -65°C to 175°C, it is well-suited for demanding environments. The 1N5807-TR is supplied in a B, Axial package and is available on tape and reel for automated assembly. This component finds application in power supplies, switching circuits, and other general rectification tasks across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | B, Axial |
| Mounting Type | Through Hole |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 30 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Current - Average Rectified (Io) | 3A |
| Supplier Device Package | B, Axial |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 50 V |
| Voltage - Forward (Vf) (Max) @ If | 875 mV @ 4 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 50 V |
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